2012/08/07 ver.1 page 1 sp n2306 w n-channel enhancement mode mosfet description applications the SPN2306W is the n- channel logic enhancement mode power field effect transistors are produced us ing high cell density , dmos trench technology. this high density process is especially tailored to minimize on-state resistance. these devices are particularly suited for low volta ge application such as cellular phone and notebook computer power management and other battery powered circuits, and low in- line power loss are needed in a very small outline surface mount package. power management in note book portable equipment battery powered system dc/dc converter load switch dsc lcd display inverter features pin configuration(sot-23) part marking 30v/5.4a,r ds(on) = 38m ? @v gs =10v 30v/4.6a,r ds(on) = 42m ? @v gs =4.5v 30v/3.8a,r ds(on) = 55m ? @v gs =2.5v super high density cell design for extremely low r ds (on) exceptional on-resistance and maximum dc current capability sot-23 package design
2012/08/07 ver.1 page 2 sp n2306 w n-channel enhancement mode mosfet pin description pin symbol description 1 g gate 2 s source 3 d drain ordering information part number package part marking SPN2306Ws23rgb sot-23 s06wyw week code : a ~ z( 1 ~ 26 ) ; a ~ z( 27 ~ 52 ) SPN2306Ws23rgb : tape reel ; pb C free absoulte maximum ratings (t a =25 unless otherwise noted) parameter symbol typical unit drain-source voltage v dss 30 v gate Csource voltage v gss 12 v t a =25 4.5 continuous drain current(t j =150 ) t a =70 i d 3.5 a pulsed drain current i dm 25 a continuous source current(diode conduction) i s 1.7 a t a =25 1.25 power dissipation t a =70 p d 0.8 w operating junction temperature t j -55/150 storage temperature range t stg -55/150 thermal resistance-junction to ambient r ja 140 /w
2012/08/07 ver.1 page 3 sp n2306 w n-channel enhancement mode mosfet electrical characteristics (t a =25 unless othe rwise noted) parameter symbol conditions min. typ max. unit static drain-source breakdown voltage v (br)dss v gs =0v,i d =250ua 30 gate threshold voltage v gs(th) v ds =v gs ,i d =250ua 0.8 1.6 v gate leakage current i gss v ds =0v,v gs =12v 100 na v ds =24v,v gs =1.0v 1 zero gate voltage drain current i dss v ds =24v,v gs =0.0v t j =55 10 ua on-state drain current i d(on) v ds R 4.5v,v gs =4.5v 10 a v gs = 10v,i d =5.4a 0.033 0.038 v gs =4.5v,i d =4.6a 0.038 0.042 drain-source on-resistance r ds(on) v gs =2.5v,i d =3.8a 0.050 0.055 ? forward transconductance gfs v ds =4.5v,i d =5.4a 12 s diode forward voltage v sd i s =1.7a,v gs =0v 0.8 1.2 v dynamic total gate charge q g 10 18 gate-source charge q gs 1.6 gate-drain charge q gd v ds =15v gs =10v i d 6.7a 3.2 nc input capacitance c iss 450 output capacitance c oss 240 reverse transfer capacitance c rss v ds =15v gs =0v f=1mhz 38 pf t d(on) 7 15 turn-on time t r 10 20 t d(off) 20 40 turn-off time t f v dd =15r l =15 i d 1.0a,v gen =10 r g =6 ? 11 20 ns
2012/08/07 ver.1 page 4 sp n2306 w n-channel enhancement mode mosfet typical characteristics
2012/08/07 ver.1 page 5 sp n2306 w n-channel enhancement mode mosfet typical characteristics
2012/08/07 ver.1 page 6 sp n2306 w n-channel enhancement mode mosfet typical characteristics
2012/08/07 ver.1 page 7 sp n2306 w n-channel enhancement mode mosfet sot-23 package outline
2012/08/07 ver.1 page 8 sp n2306 w n-channel enhancement mode mosfet information provided is alleged to be exact and con sistent. sync power corporation presumes no respon sibility for the penalties of use of such information or for any vio lation of patents or other rights of third parties which may result from its use. no license is granted by allegation or otherwise un der any patent or patent rights of sync power corpo ration. conditions mentioned in this publication are subject to change without notice. this publication surpasses and re places all information previously supplied. sync power corporation produc ts are not authorized for use as critical component s in life support devices or systems without express written approval of sync power corporation. ?the sync power logo is a registered trademark of s ync power corporation ?2004 sync power corporation C printed in taiwan C all rights reserved sync power corporation 7f-2, no.3-1, park street nankang district (nksp), taipei, taiwan, 115, r.o.c phone: 886-2-2655-8178 fax: 886-2-2655-8468 ?http://www.syncpower.com
|
